Figure 4From: Magnetoresistance in Sn-Doped In2O3Nanowiresa The linear dependence of resistance as function of the lnT and for different magnetic field intensities. The expected lnT dependence of the resistivity is clearly observed until ∼0.3 T and for higher magnetic fields, the resistance does not exhibit the negative temperature coefficient.b The magnetoresistance measurements providing additional confirmation of weak localization effectsBack to article page