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Figure 4 | Nanoscale Research Letters

Figure 4

From: Magnetoresistance in Sn-Doped In2O3Nanowires

Figure 4

a The linear dependence of resistance as function of the lnT and for different magnetic field intensities. The expected lnT dependence of the resistivity is clearly observed until ∼0.3 T and for higher magnetic fields, the resistance does not exhibit the negative temperature coefficient.b The magnetoresistance measurements providing additional confirmation of weak localization effects

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