Figure 8
From: One-Dimensional Nanostructures and Devices of II–V Group Semiconductors
a Ids–Vdscharacteristics of Zn3P2nanowire MIS-FET under gate bias ranging from −1 V to 7 V with a step of 0.5 V. The inset is a schematic illustration of the device.b Ids–Vdscharacteristics of single zigzag Zn3P2nanowire-based MIS-FET, showingp-type behavior.I–V curves ofc Zn3P2andd Cd3P2nanobelts measured at 300–100 K. The insets show the conductance in a logarithmic scale at zero bias voltage plotted as a function of 1000/T