Figure 4From: Electrostatically Shielded Quantum Confined Stark Effect Inside Polar NanostructuresNormalized wave function profiles (a.u.) for various values λD/L as marked and for: a Vo = 0.25 eVb Vo = 2.05 eV. Transition from edge-trapping to full QW occupation occurs at shorter λD (higher carrier density) for higher polarization voltageBack to article page