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Figure 1 | Nanoscale Research Letters

Figure 1

From: Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

Figure 1

(Color online)a 30 μm × 30 μm AFM scan of the sample surface close to a corner of the patterned area. Thegray scale corresponds to the local surface slope with respect to the (001) plane. The analyzed areas on planar and patterned surface are marked inblue andred, respectively.b Height distribution of islands grown on pit-pattern (red bars) and flat surface (blue).c,d Island aspect ratio versus volume for islands in the regions marked ina. Ind the island volumes have been rescaled according toxGe6and (0.87 × xGe)6for (filled square) and (open circle), respectively

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