Figure 3From: Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomographya Average Ge content,xGe, for islands marked in Fig. 1a, as a function ofz level with respect to the Si substrate (z= 0 nm).b Average Ge content of the islands as a function of their height.xGeerror bars are of about 0.02Back to article page