Table 1 Maximum diameter (Ø) of Sn droplets (DPs) and Sn _x N _y NWs obtained from heating up Sn under NH₃and from the reaction of Sn + NH₄Cl respectively, at different temperatures. In all cases a ramp rate of 30 °C/min was used to reachT_Gunder 250 sccm’s of NH₃which was then maintained for a further 60 min at the growth temperature and after which the reactor was allowed to cool down to RT in a reduced flow of 50 sccm’s NH₃

From: Synthesis of Tin Nitride Sn _x N _y Nanowires by Chemical Vapour Deposition