Figure 4From: Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube ArraysI–V characteristics of the sandwiched Si-ncs/P3HT bulk-heterojunction in the dark and under illumination at AM1.5 after annealing at 140 °C. TheI–V characteristics were taken from the blend sandwiched on solid nonporous substrate (a) and within TiO2nanotube arrays with the diameters of 50 nm (b) and 90 nm (c), respectively. TheI–V characteristics of pure polymer are shown for comparisonBack to article page