Figure 6From: SnO2Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2and CNTs Waste SootTransistor characteristic of back-gated single SnO2nanowire FET devices on silicon substrates:I ds–V dscurves for gate voltages withV gs = 9 V to 0 in −3 V steps fromtop tobottom. Theinset is the SEM image of the as-fabricated single SnO2nanowireBack to article page