Figure 2From: Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations a XTEM showing a periodic IMF array with a periodicity of 5.6 nm, asdark spots, at the GaSb/GaAs interfaceb SAED double diffraction pattern of IMF growth mode, andc XTEM of non-IMF growth mode with high threading dislocation density compared to the IMF growth modeBack to article page