Figure 3From: Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit DislocationsXRD (004) scan ofa 0.5 µm GaSb on GaAs substrate grown using IMF and non-IMF growth mode, illustrating highly relaxed GaSb for the IMF growth, andb 5 µm GaSb on GaAs substrate showing a narrow FWHM of ~20 arcsecs for the GaSb epitaxial layerBack to article page