Figure 2From: Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial LayersOnset of illumination effect for 20 nm InGaAs/20 nm GaAs samples with 4, 7, 10, 12, 13, 15, and 20 nm AlAs sacrificial layers, etched with 2.5% HF solution using 20 × microscope objective, for 8 min; the starting edges were produced by mechanical scratching. The diamond data point shows a maximum rolling distance previously reported [14]Back to article page