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Figure 3 | Nanoscale Research Letters

Figure 3

From: Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

Figure 3

Maximum rolling distance versus various AlAs thicknesses (same parameters as in Fig. 2); the starting edges were produced by mechanical scratching. Thelin e through the data in the linear increase regime is a best fit. The inset shows a cross section of step 2 in Fig. 1a, indicating rolling distanced rollmeasured from the starting edge, AlAs thicknesst AlAs, InGaAs/GaAs bilayer thicknesst bil., and radius of curvatureR of the rolled-up bilayer

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