Figure 4From: Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial LayersThe onset of the etch-suppression effect (ESE) versus HF concentration for 20 nm InGaAs/20 nm GaAs structures with 4 nm and 10 nm AlAs sacrificial layers, with 20 × microscope objective, for 8 min; the starting edges were produced by mechanical scratching. Thelines through the data are guides for the eyeBack to article page