Figure 2From: Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition TechniqueAFM images of InAs QDs grown at 420 °C on Ge substrate with InAs coverage of a 1.4 MLs, b 1.80 MLs, c 1.85 MLs, d 1.95 MLs, and e 2.35 MLs. The scan size for all the images is 2 μm × 2 μmBack to article page