Figure 7From: Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition TechniqueAFM images of InAs QDs grown at a 400 °C, b 420 °C, c 450 °C, with InAs coverage of 1.95 MLs. The size of each scan is 2 μm × 2 μmBack to article page