Figure 2From: Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 × 7 SurfaceCalculated total valence charge density plots of a clean Si substrate, b isolated H atoms, c 9H-Si(111)-7 × 7 and d the difference charge density plot by subtracting Fig. 2a and 2b from 2c. The area is 11.5 × 8 Å; the contours interval is 0.1e Å−3 for Fig. 2a, 2b and 2c and 0.5e Å−3 for Fig. 2d. Positive contours are shown as solid lines, negative contours as dashed lines and zero contours have been omitted. A is for Si adatom and R for Si rest atom, respectivelyBack to article page