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Figure 3 | Nanoscale Research Letters

Figure 3

From: A Novel Method to Fabricate Silicon Nanowire pn Junctions by a Combination of Ion Implantation and in-situ Doping

Figure 3

The measured electrical current–voltage (I–V) characteristics from the NWs. a I–V curves of three pn NWs and a pi(unimplanted) NW. Please refer to Table 1 for details of the NWs.Inset of Fig. 3a shows the I–V curve of the substrate in the same voltage range. b Semi-log plot of the I–V curves in Fig. 3a. For extracting the ideality factors of the pn junctions, the linear regions of the curves of the pn NWs in forward bias (−0.2 to −0.6 volt) were used

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