Figure 3From: A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ DopingThe measured electrical current–voltage (I–V) characteristics from the NWs. a I–V curves of three p–n NWs and a p–i(unimplanted) NW. Please refer to Table 1 for details of the NWs.Inset of Fig. 3a shows the I–V curve of the substrate in the same voltage range. b Semi-log plot of the I–V curves in Fig. 3a. For extracting the ideality factors of the p–n junctions, the linear regions of the curves of the p–n NWs in forward bias (−0.2 to −0.6 volt) were usedBack to article page