A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

Table 1 Details containing the dimensions, the measured ON/OFF current ratios, and ideality factors of the NWs whose I–V curves are shown in Fig. 3a

Type	Number	Diameter (nm)	Length (nm)	ON/OFF current ratio	Ideality factor (n)
p–n	1	160	250	168	1.8
p–n	2	155	290	125	1.7
p–n	3	230	277	50	2.0
p–i	–	145	280	–	–