Figure 2From: Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholesa AFM image of an AlGaAs surface after Al LDE at T1 = T2 = 620°, t1 = 6 s, t2 = 180 s, and F = 0.47 ML/s. b Distribution of the hole depth d H . c Profiles of the shallow hole marked by arrow “B” in Fig. 2a along [110] and [−110] azimuth. d Profiles of the deep hole marked by arrow “A” in Fig. 2a and of a typical deep hole after filling with d F = 0.57 nm GaAsBack to article page