Figure 4From: Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled NanoholesPL measurements at T = 3.5 K of several type I samples. a Reference sample without filling, b reference sample without LDE step, c – f samples with LDE and filling where d f was varied as indicated. The laser energy was 2.33 eV, and the excitation power I e = 450 W/cm2Back to article page