Table 1 Simulation parameters
Parameter | Value | Unit |
|---|---|---|
Ion concentration | 1 | mM |
Substrate doping | 3 × 1016 | cm−3 |
Diffusion doping | 1019 | cm−3 |
Temperature | 300 | K |
Device length | 400 | nm |
Device width | 1,000 | nm |
Base pairs | 30 | – |
DNA spacings | 20 | nm |
Insulator thickness | 18 | nm |