Figure 5
From: Multiscale Simulation of Indentation, Retraction and Fracture Processes of Nanocontact

Atomic configurations of Cu substrate during the second part of retraction process at different depth: a η = −1.56 nm, b η = −3.5 nm
From: Multiscale Simulation of Indentation, Retraction and Fracture Processes of Nanocontact
Atomic configurations of Cu substrate during the second part of retraction process at different depth: a η = −1.56 nm, b η = −3.5 nm