Figure 3
From: Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3
Experimental residual stress obtained by XRD (left perpendicular axis) and a/b ratio (right perpendicular axis) versus different thickness of Pd thin film. Point a refers to oxygen 1 s concentration existed in the 2 nm above interface in the Pd film and point b corresponds to the oxygen 1 s concentration in the interface, see Fig. 1a. Correlation between two plots is attributed to oxygen diffusion through Pd film which caused by relaxation process