Figure 6

Transmission electron microscopy image of Si nanoparticles fabricated by pulsed laser ablation at 2 Torr of He (a) and corresponding nanocluster size distribution (b); c Dependence of the nanocrystal size (dashed line) and film porosity (solid line) on the pressure of He during the deposition; Inset typical scanning electron microscopy image of films prepared by pulsed laser ablation; d Dependence of the position of PL peak from laser-ablated films on the gas pressure during the deposition