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Table 2 Field-emission data of different samples, here Eto (V/μm) and Eth (V/μm) are turn-on electric field and threshold electric field, respectively; β is the field-enhancement factor

From: Synthesis and Enhanced Field-Emission of Thin-Walled, Open-Ended, and Well-Aligned N-Doped Carbon Nanotubes

Samples

Eto (V/μm)

Eth (V/μm)

β

Data source

ZnO nanoneedle arrays

5.7

793

[34]

ZnS heterostructures

2.66

4.01

>2,600

[35]

Aligned N-doped CNTs

2.30

[14]

MWCNT

1.88

2.40

1.86 × 104

[37]

SWCNTs

2.40

3,392

[38]

Aligned CNTs

1.13

2.25

6,222

[18]

N-doped DWCNTs

~0.9

1.78

3,399

[39]

CuO nanoneedle arrays

0.85

[36]

FeNi-CNTs

0.30

0.65

2.48 × 104

[5]

ANCNT(780)a

0.45

0.60

6.41 × 104

This study

ANCNT(820)a

0.35

0.55

7.79 × 104

This study

ANCNT(860)a

0.27

0.49

1.09 × 105

This study

  1. aANCNT (860), ANCNT (820), and ANCNT (780) denote the samples prepared by acetonitrile at a growth temperature of 860, 820, and 780°C, respectively

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