Figure 2From: A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous IntegrationCross-sectional transmission electron microscopy images of a NELO GaN after lift off from the GaN template, b a nanorod after lift-off. Micro-photoluminescence of c NELO GaN flat surface and the surface with nanorods after release from substratesBack to article page