Figure 3From: A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous IntegrationMolecular Dynamic simulation results of the separation of NELO GaN nanostructures from GaN template near the SiO2 mask. a Cross-sectional SEM image of NELO GaN near the nanostructured SiO2 mask; the square illustrates the unit that was chosen in the MD simulation; b–f are the MD simulation results at time of 0, 60, 100, 140 and 180 ps after chemical removal of SiO2, respectively. The results indicate that there is a large strain field at the corners of the GaN nanorods. and the built-in stress caused by the interaction between GaN and SiO2 mask contributed to the fracture at the interface between the GaN film and the original GaN substrateBack to article page