Figure 2From: InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applicationsa, b, and c are 5 × 5 μm2 AFM images of In0.2Ga0.8As/GaAs (210) surface structures and a line profile. d, e, and f are 5 × 5 μm2 AFM images of In0.2Ga0.8As/GaAs (311) surface structures and a line profileBack to article page