Table 1 FWHM values of In0.2Ga0.8As/GaAs PL spectra on all orientations, and energy shift ∆E (= E(100) − E(xyz)) for high-index surfaces compared to (100)
From: InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications
Orientation | FWHM (nm) | ∆E (meV) | ||
---|---|---|---|---|
295 K | 77 K | 295 K | 77 K | |
(100) | 11.6 | 5.4 | – | − |
(731) | 9.8 | 4.1 | 17 | 16 |
(210) | 48 | 14.5 | – | −21 |
(311) | 7.4 | 2.9 | 16 | 16 |