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Table 1 FWHM values of In0.2Ga0.8As/GaAs PL spectra on all orientations, and energy shift ∆E (= E(100) − E(xyz)) for high-index surfaces compared to (100)

From: InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Orientation

FWHM (nm)

∆E (meV)

295 K

77 K

295 K

77 K

(100)

11.6

5.4

(731)

9.8

4.1

17

16

(210)

48

14.5

−21

(311)

7.4

2.9

16

16

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