Figure 1
From: Field Emission of ITO-Coated Vertically Aligned Nanowire Array
Schematic view of fabrication process of ITO-coated VANA. a Circular aperture patterns (φ = 1 μm) of Cr layer on a fused silica wafer. b SU-8 50 on Cr layer. c Backside UV exposure with exposure dose of 200 mJ/cm2 filtered by a narrow band-pass filter. d SU-8 VANA after development of SU-8 and Cr etching. e Pyrolyzed carbon VANA by pyrolysis process at 900°C for 30 min. f ITO-coated VANA with 0.1-μm-thick ITO