Figure 5From: Creation of Controlled Defects Inside Colloidal Crystal Arrays with a Focused Ion BeamNanocavities obtained by FIB drilling at 30 kV with 1 pA nominal current. Left figure: a circular pattern with SCM used to drill cavities with nominal diameters of 60, 90 and 120 nm, respectively (from right to left). Right figure: a circular pattern with serial milling with a through hole of 100 nm (left) and a circular cavity of 60 nm (right), respectively. (Ion images HFW 2.84 μm and 1.97 μm)Back to article page