Figure 2

Profiles of the normalized strain energy ρ and average in-plane strain, (γ₁₁ + γ₂₂)/2, at the surface of a GaAs half-space with a InAs point QD buried at (0, 0, 50 nm) with an effective volume equal to the volume of a pyramid with 20 and 50 nm base length. The profile is taken along a line in the [110]-direction passing through (0, 0, 0). The values of ρ should be nearly identical to those in Fig. 1 in Ref. [17]