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Table 1 Parameters (binding energy, full width at half maximum (FWHM)) of the XPS peaks and VBMs for w-InN, h-BN and w-InN/h-BN samples, the spectra as shown in Fig. 1

From: Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

Samples States Binding energy(eV) Bonding FWHM(eV)
w-InN In 3d5/2 443.71 In-N(screened) 1.09
   444.54 In-N(unscreened) 1.09
   445.45 In-O 1.09
  VBM 0.89   
h-BN B1s 190.1 B–N 1.6
  VBM 0.99   
w-InN/h-BN In 3d5/2 443.78 In-N(screened) 1.09
   444.67 In-N(unscreened) 2.11
   446.15 In-O 1.09
  B1s 190.37 B–N 1.3
  1. Energy is referenced to the Fermi level (0 eV).The errors in the peak positions and VBM are ± 0.03 and 0.08 eV, respectively