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Table 1 Parameters (binding energy, full width at half maximum (FWHM)) of the XPS peaks and VBMs for w-InN, h-BN and w-InN/h-BN samples, the spectra as shown in Fig. 1

From: Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

Samples

States

Binding energy(eV)

Bonding

FWHM(eV)

w-InN

In 3d5/2

443.71

In-N(screened)

1.09

  

444.54

In-N(unscreened)

1.09

  

445.45

In-O

1.09

 

VBM

0.89

  

h-BN

B1s

190.1

B–N

1.6

 

VBM

0.99

  

w-InN/h-BN

In 3d5/2

443.78

In-N(screened)

1.09

  

444.67

In-N(unscreened)

2.11

  

446.15

In-O

1.09

 

B1s

190.37

B–N

1.3

  1. Energy is referenced to the Fermi level (0 eV).The errors in the peak positions and VBM are ± 0.03 and 0.08 eV, respectively

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