Figure 6
From: Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands
The HRTEM images of the a as-grown SiGe film and b SiGe film annealed at 900°C for 30 min. The results clearly indicate the degradation of crystalline structure resulted from the ATG instability-induced surface roughening driven by strain relaxation