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Table 1 Electrical and optical parameters in Ga x Se100−x nanorods at T = 298 K

From: Effect of Composition on Electrical and Optical Properties of Thin Films of Amorphous Ga x Se100−x Nanorods

Sample

σdc−1 cm−1)

σ0−1 cm−1)

Δ E c (eV)

α (cm−1) (104)

E g (eV)

Ga3Se97

5.48 × 10−10

20.25

0.51

0.51

1.80

Ga6Se94

3.21 × 10−10

37.90

0.65

0.46

1.78

Ga9Se91

2.51 × 10−10

56.04

0.66

0.44

1.74

Ga12Se88

4.24 × 10−10

59.62

0.68

0.52

1.72

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