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Table 1 Electrical and optical parameters in Ga x Se100−x nanorods at T = 298 K

From: Effect of Composition on Electrical and Optical Properties of Thin Films of Amorphous Ga x Se100−x Nanorods

Sample σdc−1 cm−1) σ0−1 cm−1) Δ E c (eV) α (cm−1) (104) E g (eV)
Ga3Se97 5.48 × 10−10 20.25 0.51 0.51 1.80
Ga6Se94 3.21 × 10−10 37.90 0.65 0.46 1.78
Ga9Se91 2.51 × 10−10 56.04 0.66 0.44 1.74
Ga12Se88 4.24 × 10−10 59.62 0.68 0.52 1.72