Figure 2From: Fabrication of Coaxial Si1−x Ge x Heterostructure Nanowires by O2 Flow-Induced Bifurcate Reactions a SEM image of Si1−x Ge x nanowires with diameter ranged from 50 to 300 nm. b TEM image of individual single crystal Si1−x Ge x nanowires with a thin layer of native oxides. Upper inset is SAED pattern image that shows the nanowire is single crystal and a growth direction is <1 1 0>. Below inset is EDS profile in the radial direction of the nanowireBack to article page