Figure 5
From: Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes on Substrate by Europium Oxide
a, b SEM image of well-oriented SWNT arrays on SiO2/Si wafer by EtOH-CVD at 900°C, a using the fast-heating method, and the inset is its part magnified image, b using the ordinary method, and the right inset is TEM image of individual nanotube, c AFM image of the as-grown SWNTs, Raman spectra d and e are RBM and G-band, respectively, of two different SWNTs in sample (b)