Figure 4From: Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes a Neutral exciton X and biexciton XX fine-structure splitting (FSS) for several shallow-hole GaAs QDs as function of the average peak energy. Two samples were analyzed with different filling levels d f as indicated. b Difference between X and XX peak maxima for the sample with d f = 0.79 nm. Error bars in (b) are smaller than the data pointsBack to article page