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Figure 10 | Nanoscale Research Letters

Figure 10

From: Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

Figure 10

Side (top panel) and top (bottom panel) view of the electron distribution probability when the hole position is fixed on top of the Ge atom indicated by a black dot. The wire under consideration is an Abrupt SiGe NW with diameter d = 1.6 nm and composition x Ge = 0.6875. Blue spheres represent Ge atoms, cyan spheres Si atoms, while the small white spheres are H atoms used to saturate the dangling bonds. The isosurface of the e-h distribution probability is shown in green-yellow (color online)

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