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Table 4 DFT-LDA electronic gaps (in eV) as function of Ge composition x Ge for Abrupt SiGe NWs with d = 1.6 nm

From: Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

Composition x Ge DFT-LDA E g
1 0.9376
0.8958 0.9278
0.6875 0.6845
0.5000 0.6438
0.3125 0.6834
0.1042 0.8616
0 0.9856