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Table 4 DFT-LDA electronic gaps (in eV) as function of Ge composition x Ge for Abrupt SiGe NWs with d = 1.6 nm

From: Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

Composition x Ge

DFT-LDA E g

1

0.9376

0.8958

0.9278

0.6875

0.6845

0.5000

0.6438

0.3125

0.6834

0.1042

0.8616

0

0.9856

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