Table 4 DFT-LDA electronic gaps (in eV) as function of Ge composition x Ge for Abrupt SiGe NWs with d = 1.6 nm
From: Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results
Composition x Ge | DFT-LDA E g |
---|---|
1 | 0.9376 |
0.8958 | 0.9278 |
0.6875 | 0.6845 |
0.5000 | 0.6438 |
0.3125 | 0.6834 |
0.1042 | 0.8616 |
0 | 0.9856 |