Figure 2From: Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaNa Low temperature PL spectra of the InGaN/GaN multiple quantum wells at 10 K; MQWs A and B with structures on GaN and nano-ELO GaN template; MQWs C and D with indium-rich nanostructures incorporation in InGaN/GaN structures on GaN and nano-ELO GaN template. AFM plan view images of regrowth b strain relaxed GaN on nanopore SiO2 template c GaN on conventional GaN layer. (The arrows points to the pits generated on the layers)Back to article page