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Figure 4 | Nanoscale Research Letters

Figure 4

From: Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

Figure 4

AFM image of indium-rich InGaN quantum dots (QDs) deposited on the InGaN wetting layer using overgrown GaN on a conventional GaN and b nano-ELO GaN template. c A single quantum well of sample C with clusters of InGaN nanostructures formed by layer growth of the InGaN well layer which wets the quantum dots. The RMS roughness is ~0.82 nm in the square box defined

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