Figure 3From: Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in IslandsPL spectra obtained at different P exc for islands on a planar Si(001) substrate. The island PL shifts strongly with increasing excitation power from 0.77 eV at P exc = 16 mW/cm2 to 0.86 eV at P exc = 244.3 W/cm2. The detector cut-off at 0.77 eV is indicated by the dashed line. The spectra are shifted vertically for clarityBack to article page