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Figure 2 | Nanoscale Research Letters

Figure 2

From: Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Figure 2

Snapshots for the simulation after deposition of 1 ML of Ge on a pit-patterned substrate. Red circles represents 2D islands and blue ones are for pyramids. The surface shown corresponds to 480 × 480 nm2 (i.e., 1,200 × 1,200 lattice sites). a Growth at fixed flux (0.02 ML/s) for pit spacing of 40 nm at three different temperatures (from left to right: 750, 850 and 950 K). b Growth at fixed temperature (850 K) for pit spacing of 80 nm at three different deposition fluxes (from left to right: 0.04, 0.02 and 0.01 ML/s)

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