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Figure 3 | Nanoscale Research Letters

Figure 3

From: Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)

Figure 3

Islands volume distributions from simulations at different temperatures (750, 850 and 950 K for the simulation parameters) at fixed flux (0.02 ML/s) and pit spacing (40 nm) after deposition of 1 ML of Ge. Curves are normalized and volumes are scaled with respect to the mean; values are averaged from 5 independent simulations. At the lowest temperature, the distribution is bimodal: the peak at larger volume is for islands inside pits, while the other refers to those grown in between.

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