Figure 1From: Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial OvergrowthCross-sectional SEM images of a the GaN crystals at an intermediate growth stage, b after full coalescence. c Schematic representation of the crystal growth during asymmetric ELO. The lines inclined at 32° from the surface represent the BSFs. The a and +c numbers refer to the crystallographic directions [11−20] and [0001], respectivelyBack to article page