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Figure 2 | Nanoscale Research Letters

Figure 2

From: Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell

Figure 2

a Effect of low temperature on the transfer characteristic of the SWCNT transistor. Low temperature greatly increases the ON/OFF ratio and slightly reduces the hysteresis width. b Erase-read-write-read cycles of the SWCNT memory device with ± 20 V and 0.25 s pulses. A negative pulse pushes the memory in the OFF state, while a positive pulse pulls it in the ON state. c Endurance tests performed by cycling at 77 K and in vacuum. d Retention of states under continuous reading in air (blue triangle), at low pressure (black box), and at low pressure and temperature (red circle). The same device has better retention at low pressure, and the retention is further improved at low temperature which produces a larger separation between the ON and OFF states. Current corresponding to each state was measured at 1-s intervals

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