Figure 3From: Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cella Endurance tests performed on the same SWCNT memory device as in Fig. 2, at 290 K in air. Switching with ± 20 V and 0.25 s pulses, reading at VGS = 0 V. b Endurance test of another SWCNT memory device at room conditions with ± 20 V and 0.25-s switching pulses and reading at VGS = 0 VBack to article page