Figure 2From: Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)Raman spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (sample C), (iii) 1,523 K (sample D), respectivelyBack to article page