Figure 4From: Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInPTangential stress component above a misfit dislocation calculated for a CS-GaInP and b for TS-GaInP layers. The AFM cross-sections in (a) and (b) are measured along the lines in Fig. 3c and 3d, respectivelyBack to article page